实例介绍
【实例简介】
Inside_NAND_Flash_Memories.pdf
Rino micheloni· Luca Crippa· Alessia marelli Inside nand flash Memories Springer Rino micheloni Luca Crippa Integrated Device Technology Forward Insights Agrate Brianza North york Ital Canada rino. micheloni@ieee. org luca.crippa @ieee.org Alessia marelli Integrated Device Technology agrate brianza Italy lessiamarelli@gmail.com ISBN97890-481-9430-8 e-ISBN97890-481-9431-5 DOI10.1007/978-90-481-9431-5 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2010931597 O Springer Science+Business Media B.V. 2010 No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written being entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose of permission from the Publisher, with the exception of any material supplied specifically for the purpo Cover design: eStudio Calamar SL Printed on acid-free paper SpringerispartofSpringerScience+businessMedia(www.springer.com) Preface In the last decade Flash cards became the most important digital storage support It is difficult to identify a single killer application(digital photography, MP3 digital video, ...)or whether the success of this media support is due to its usability in different applications. It is also difficult to state whether the recent lution in the infotainment area has been triggered by the availability of high- performance NAND Flash memories or if the extraordinary success of Flash cards is a consequence of the establishment of new applications In any case, independently of the cause-effect relationship linking new digital applications and Flash cards, to realize how NANd Flash memories entered in our daily life, it is sufficient to imagine as they would change our recent habits if the NAND memories disappeared suddenly. To take a picture it would be necessary to find a film (as well as a traditional camera .), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a console for an extended entertainment The development of nand Flash memories will not be set down on the mere evolution of these digital systems since a new killer application can trigger a further success for this memory support: the replacement of Hard Disk Drives(HDD) with Solid State Drives (SSD) The advantages of Ssd with respect to HDD are countless(higher read/writ speed, higher mechanical reliability, random access, silent operation, lower power consumption, lower weight, .. ) Nevertheless, the cost per gigabyte is still significantly favorable to hDd and the success of ssd will depend only on the performances that they will succeed in reaching The present book, the fourth authored by rino micheloni and coworkers after VLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and Error Correction Codes for Non-volatile Memories, all published by Springer, tackles all the main aspects related to NANd Flash memories, from the physical technological, and circuit issues to their use in Flash cards and Ssds After an extended market overview(Chap. 1), Chap 2 has been conceived as a guide for the entire book, so that the reader can directly reach the heart of the problems that interest him The following chapters deepen physical and technological aspects. In particular Chaps. 3 and 4 tackle technological and reliability issues of traditional Floating Gate NAND memories, respectively, while the state-of-the-art of charge trapping technologies is effectively summarized in Chap 5 Ⅴ i Preface The central part of the book is dedicated to circuit issues: logic( Chap. 6), sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12) Other basic topics related to circuit aspects are also analyzed, such as the implementation of Double Data Rate interfaces( Chap. 7), while multilevel storage (2 bits per cell) is presented in Chap. 10 Techniques adopted to increase memory reliability and yield are discussed in Chaps. 13 and 14, the former dealing with redundancy, the latter with Error Correction Codes. The test flux used by nand memories manufactures is described in Chap 15 Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allow reaching the lower cost per gigabyte and that will conquer, in the next few years, the market of consumer applications The last chapters are dedicated to the two most popular systems based on NAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationship between Nand memories and system performances are highlighted Finally, Chap. 19 describes the effects of ionizing radiations on non-volatile memories, to understand whether NaNd memories can be safely used in space and military applications Prof. Piero olivo Dean of the Engineering Faculty University of ferrara, Italy Acknowledgements After completing a project like a technical book, it is very hard to acknowledge all the people who have contributed directly or indirectly with their work and dedication First of all, we wish to thank all the authors of the contributed chapters We have to thank mark de Jongh for giving us the possibility of publishing this work and cindy zitter for her continuous support Last but not least, we keep in mind all our present and past colleagues for their suggestions and fruitful discussions Rino. Luca and alessia Table of contents Preface Acknowledgements vII I Market and applications for nand Flash memories Gregory Wong 2 NAND overview: from memory to systems R. Micheloni, A Marelli and S. Commodaro 3 Program and erase of Nand memory arrays 55 Cristoph Friederich 4 Reliability issues of NAND Flash memories C. Zambelli. a. Chimenton and p. olivo 5 Charge trap nand technologies 115 Alessandro grossi 6 Control logic 131 A Marelli.R Micheloni andR. ravasio 7 NAND DDR interface 161 Andrea silvagni 8 Sensing circuits 197 L. Crippa and R. micheloni 9 Parasitic effects and verify circuits 235 L. Crippa and R. michelon O MLC Storage 261 L Crippa and R Micheloni 11 Charge pumps, voltage regulators and HV switches R Micheloni and L Crippa 【实例截图】
【核心代码】
Inside_NAND_Flash_Memories.pdf
Rino micheloni· Luca Crippa· Alessia marelli Inside nand flash Memories Springer Rino micheloni Luca Crippa Integrated Device Technology Forward Insights Agrate Brianza North york Ital Canada rino. micheloni@ieee. org luca.crippa @ieee.org Alessia marelli Integrated Device Technology agrate brianza Italy lessiamarelli@gmail.com ISBN97890-481-9430-8 e-ISBN97890-481-9431-5 DOI10.1007/978-90-481-9431-5 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2010931597 O Springer Science+Business Media B.V. 2010 No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written being entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose of permission from the Publisher, with the exception of any material supplied specifically for the purpo Cover design: eStudio Calamar SL Printed on acid-free paper SpringerispartofSpringerScience+businessMedia(www.springer.com) Preface In the last decade Flash cards became the most important digital storage support It is difficult to identify a single killer application(digital photography, MP3 digital video, ...)or whether the success of this media support is due to its usability in different applications. It is also difficult to state whether the recent lution in the infotainment area has been triggered by the availability of high- performance NAND Flash memories or if the extraordinary success of Flash cards is a consequence of the establishment of new applications In any case, independently of the cause-effect relationship linking new digital applications and Flash cards, to realize how NANd Flash memories entered in our daily life, it is sufficient to imagine as they would change our recent habits if the NAND memories disappeared suddenly. To take a picture it would be necessary to find a film (as well as a traditional camera .), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a console for an extended entertainment The development of nand Flash memories will not be set down on the mere evolution of these digital systems since a new killer application can trigger a further success for this memory support: the replacement of Hard Disk Drives(HDD) with Solid State Drives (SSD) The advantages of Ssd with respect to HDD are countless(higher read/writ speed, higher mechanical reliability, random access, silent operation, lower power consumption, lower weight, .. ) Nevertheless, the cost per gigabyte is still significantly favorable to hDd and the success of ssd will depend only on the performances that they will succeed in reaching The present book, the fourth authored by rino micheloni and coworkers after VLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and Error Correction Codes for Non-volatile Memories, all published by Springer, tackles all the main aspects related to NANd Flash memories, from the physical technological, and circuit issues to their use in Flash cards and Ssds After an extended market overview(Chap. 1), Chap 2 has been conceived as a guide for the entire book, so that the reader can directly reach the heart of the problems that interest him The following chapters deepen physical and technological aspects. In particular Chaps. 3 and 4 tackle technological and reliability issues of traditional Floating Gate NAND memories, respectively, while the state-of-the-art of charge trapping technologies is effectively summarized in Chap 5 Ⅴ i Preface The central part of the book is dedicated to circuit issues: logic( Chap. 6), sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12) Other basic topics related to circuit aspects are also analyzed, such as the implementation of Double Data Rate interfaces( Chap. 7), while multilevel storage (2 bits per cell) is presented in Chap. 10 Techniques adopted to increase memory reliability and yield are discussed in Chaps. 13 and 14, the former dealing with redundancy, the latter with Error Correction Codes. The test flux used by nand memories manufactures is described in Chap 15 Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allow reaching the lower cost per gigabyte and that will conquer, in the next few years, the market of consumer applications The last chapters are dedicated to the two most popular systems based on NAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationship between Nand memories and system performances are highlighted Finally, Chap. 19 describes the effects of ionizing radiations on non-volatile memories, to understand whether NaNd memories can be safely used in space and military applications Prof. Piero olivo Dean of the Engineering Faculty University of ferrara, Italy Acknowledgements After completing a project like a technical book, it is very hard to acknowledge all the people who have contributed directly or indirectly with their work and dedication First of all, we wish to thank all the authors of the contributed chapters We have to thank mark de Jongh for giving us the possibility of publishing this work and cindy zitter for her continuous support Last but not least, we keep in mind all our present and past colleagues for their suggestions and fruitful discussions Rino. Luca and alessia Table of contents Preface Acknowledgements vII I Market and applications for nand Flash memories Gregory Wong 2 NAND overview: from memory to systems R. Micheloni, A Marelli and S. Commodaro 3 Program and erase of Nand memory arrays 55 Cristoph Friederich 4 Reliability issues of NAND Flash memories C. Zambelli. a. Chimenton and p. olivo 5 Charge trap nand technologies 115 Alessandro grossi 6 Control logic 131 A Marelli.R Micheloni andR. ravasio 7 NAND DDR interface 161 Andrea silvagni 8 Sensing circuits 197 L. Crippa and R. micheloni 9 Parasitic effects and verify circuits 235 L. Crippa and R. michelon O MLC Storage 261 L Crippa and R Micheloni 11 Charge pumps, voltage regulators and HV switches R Micheloni and L Crippa 【实例截图】
【核心代码】
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