实例介绍
【实例简介】
3D flash是目前在固态硬盘中使用的主流存储介质,本文档共包含12章,详细描述了3D flash的应用前景和原理等。
editor Rino michela Performance Storage bu Mi Corporation Vimercate Italy ISBN97894-017-7510-6 ISBN978-94-017-75120( eBook) DOI10.10071978-94-017-75120 Library of Congress Control Number: 2016936991 o Springer Science+Business Media Dordrecht 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this the relevant protective laws and regulations and therefore free for general use names are exempt from publication does not imply, even in the absence of a specific statement, that such names are exempt from The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made Printed on acid-free paper This springer imprint is published by springer Nature The registered company is Springer Science+Business Media B.v. Dordrecht Once again to my wife sabrina and my daughters Laura and greta Rino micheloni Foreword In 1903, the Wright brothers made the first powered flight into the third dimension After the fulfillment of this ancient dream, predictions of longer, faster, and safer fights were easy to make. Fundamental, practical breakthroughs, such as this first powered flight, are momentous when achieved. But even more striking are the unforeseen achievements that these breakthroughs enable and inspire. Few would have predicted that humans would leave footprints on the surface of the moon only 66 years after the Wright brothers' first flight The semiconductor industry touches nearly all parts of our lives and quietly scales precision manufacturing to volumes unimaginable with other methods Wafers of nonvolatile memory (NVM) routinely are fabricated with trillions of individual cells. Although challenging this density of components was predictable from the early days of gordon moore's observations that the number of compo nents on a 2D integrated circuit would double every year, and later every 2 years (Moore's Law"). Harder to predict, in 1965, were the inventions of the internet, smart phones, and autonomous vehicles. These are economically possible largely because of moore’sLaw The doubling of components is slowing to every 2.5 years. But we have also arrived at an unprecedented inflection point for Moore's Law. Component density can continue to increase by building into the third dimension. Other technologies have already added an"extra"dimension. These include pressure-sensitive touch- screens, video gesture capture, autonomous vehicle navigation, 3D printing, and drones that maneuver throughout the sky Traditional 2D semiconductor processing obviously includes the third dimen sion. Material thicknesses are varied devices are formed by multiple layers of G. Moore,"Cramming more components onto integrated circuits", Electronics Magazine 19 pp.24-27,(1965);Additionalinformationathttp://www.computerhistory.org/semiconductor/ timeline/1965-Moore html PRecently, Intel has stated that since the 22 nm process node two and a half years is the pace of doublingofcomponentsperintegratedcircuithttp://www.cnet.com/news/keeping-up-with moores-law-proves-difficult-for-intel/ VI Foreword materials and shapes; and interlayer interconnects enable complex routing Furthermore, FinFET 3D transistors have been shipping in microprocessors for several years. However, the processing that is currently utilized for 3D(orverti caP)NAND flash is fundamentally different. 2D processes fabricate devices that can be fully enumerated by viewing the x-y plane of the wafer from above However 3D flash also fabricates devices that are enumerated in the z direction perpendicular to the plane of the wafer. Just as in 1965 when Gordon Moore published his projections for the future of semiconductor fabrication, we cannot foresee all of the benefits that scaling in this additional dimension will provide It would be shortsighted to dismiss 3D semiconductor processing as just an incremental step in the progression of micro/nano-electronic fabrication. This new dimension multiplies the number of elements that can be created with the same number of photolithographic steps. As experience in manufacturing is gained, this multiplier grows from dozens, to hundreds, and possibly beyond. Fabricating devices in the third dimension provides a new degree of freedom for creativity il designs, architectures, and layouts. It offers challenges to create breakthroughs il testing, integration, power density, heat dissipation, and systems-on-chip. 3D semiconductors can become a profitable platform for experimenting with interac tions between these fields to yield new economies of scale that do not yet exist 3D upon 3D systems are being imagined in which a stack of varied devices can replace a computer, and eventually a portion of a data center. What is not yet seen is the new field of view these advances will clear so that we can envision what is beyond them. Becoming efficient at building 3D flash is likely to be a critical step on the path to creating what has not yet been imagined. It is often said that what used to take a roomful of electronics now easily fits in our pockets. 3D processing may allow us to make the same statement about a roomful of today's technology It may also allow us to say that what once took a pocketful of components now fits in a blood cell To accelerate the implementation and adoption of 3D systems, clear, practical information is needed. Rino Micheloni's new book provides a wealth of hard-to-find information that can help push the industry forward. It can expand the number of people who confidently take the first step into new manufacturing possibilities. Just as the practical skills needed for creating powered fight were learned in a bicycle shop, the practical skills for creating the next breakthroughs of nano-electrical systems are being learned in 3D flash fabs. This large industry will serve as an invaluable incubator from which future jobs, employees, and inventors will grow. University professors are encouraged to build on the information in this book and make 3D complexity clear and understandable for the next generations of graduates. 3D processing and design will likely move from the "future topics section of classes to core fundamentals of the engineering curriculum. Students will C H. Lee et al., " Novel body tied FinFet cell array transistor dRaM with negative word line operation for sub 60 nm technology and beyond", VLSI Technical Digest, pp. 130-131,(2004) learn how to efficiently transport charge at the 3D nanoscale and perhaps have routine undergraduate lab exercises on the manipulation of electron spin from one layer to the next The important lessons learned by fabricating 3D flash in high volume will provide insights for forming nanoscale"vertical structures that can act as scaf- folding for future manufacturing techniques. These scaffolds might support and direct self-assembling structures or even biological growth. Such structures and know-how may revolutionize power efficiency, health care, and system miniaturization As cost and power efficiencies are realized, products with tremendous process- ing, sensing, and data densities can be expected. These products may make it possible to automate and optimize tasks from the critical to the mundane to the joyous. Affordable weather forecasts for your precise location may become avail able. Autonomous transport will free up many human hours lost while driving enabling an increase in personal productivity. Ever more capable personal assistants will provide custom coaching for your athletic performance, artistic expression, or even social interactions This high density of processing, sensing, and data will enable early-adopters to differentiate their products and services in new ways, creating profitable market opportunities. As 3D processing becomes more commonplace, its techniques may be applied to existing products to improve their utility, cost, and power con sumption. Optimal design, across all electronics, might need to be redefined. We are likely to see old industries disrupted and new ones created Thanks to Rino and his many authors, contributors, supporters, editors, and staff for creating an accessible source of difficult-to-obtain knowledge on 3d memory I believe your work will serve as a catalyst for accelerating advances in 3D wafer fabrication. This, in turn, will accelerate advances in the many fields that depend on semiconductor technology Plano. TX. usa Charles h. sobey 2016 Chief Scientist at ChannelScience Preface It is difficult to understate the impact of NAND flash memory in the last decade Although flash memory has existed for a few decades, the most recent generations of nand memory have enabled wholesale change in many aspects of our daily lives. The digital music player revolution was greatly accelerated with a conversion from miniature Hard Disk Drives(HDDs)to NAND flash memory, providing the ability for customers to carry more than just the initial ground-breaking(at the time 1000 songs in your pocket". Now were carrying movie collections, video pod casts,albums, video games, and home videos in that same pocket, due in large part to advances made in NAND flash technology. Who would have guessed that a major feature for todays smart phone buyer would be the amount of local storage (i.e, NAND flash) maintained in the phone? In addition to the huge advances enabled by nand flash in consumer devices, a similar dynamic is emerging in the systems that power the internet. The intro duction of NAND fash(and SSDs)to storage architectures has completely dis rupted the existing storage giants, causing many of them to acquire start-ups versus building their own systems that can capitalize on the performance benefits of NAND-based Ssds over traditional hdds. entire racks of hdds are being replaced by a single instance of an all-flash-array, and end customers are finding themselves paying less in total cost of ownership. The presence of NAND flash, as well as other next-generation nonvolatile memories, in future storage architectures is also driving an entirely new cycle of innovation in software and hardware design, creating a Storage Renaissance of sorts To put it simply, nand flash continues to disrupt our world, and it doesnt appear to be slowing down 3D NaNd is the next enabler of continued advancement and disruption, and this book provides an excellent foundation for anyone interested in the technology, where the technology is heading next, and its impact on the industry Derek d. dicker Vice president and performance Storage BU Manager, Microsemi Corporation Acknowledgments Writing a technical book is always a challenge as there are so many details, dia- grams, graphs, and numbers that it is very easy to have"bugs"(mistakes, errors), like in all engineering projects. This is why I am especially grateful to all the people who volunteered to review the chapters This book would have never reached a conclusion without all the contributed chapters. I know that authors spent weekends and nights to put together the best possible material. Thank You All! I also want to thank Cindy Zitter from Springer: this is the sixth book she is helping me with. I do really appreciate her continuous support Last but not least, let me thank Luca Crippa for his tireless dedication to this project: he contributed with all the amazing bird's-eye views and cross sections of Chaps. 3-6. I am sure that the reader will be impressed by these 3d views Rino micheloni Contents The business of nand Rahul n. advani 2 Reliability of 3D NANd Flash memories .29 A. Grossi. C. Zambelli and p. olivo 3 3D Stacked NAND Flash Memories 63 Rino micheloni and Luca Crippa 4 3D Charge Trap NAND Flash Memories 85 Luca Crippa and Rino micheloni 5 3D Floating Gate NANd Flash Memories 129 Rino micheloni and luca Crippa 6 Advanced Architectures for 3D NAND Flash memories with vertical channel 167 Luca Crippa and rino micheloni 7 3D VG-Type NAND Flash memories ....197 Andrea silvagni 8 RRAM Cross-Point Arrays 223 Huaqiang Wu, Yan Liao, Bin Gao, Debanjan Jana and He Qian 9 3D Multi-chip Integration and Packaging Technology for NAND Flash memories 261 Herb huang and rino micheloni 10 BCH and LDPC Error Correction Codes for NAND Flash memories 281 Alessia marelli and rino micheloni 11 Advanced Algebraic and Graph-Based ECC Schemes for Modern Nvms · 321 Frederic sala, Clayton Schoeny and Lara dolecek XV 【实例截图】
【核心代码】
3D flash是目前在固态硬盘中使用的主流存储介质,本文档共包含12章,详细描述了3D flash的应用前景和原理等。
editor Rino michela Performance Storage bu Mi Corporation Vimercate Italy ISBN97894-017-7510-6 ISBN978-94-017-75120( eBook) DOI10.10071978-94-017-75120 Library of Congress Control Number: 2016936991 o Springer Science+Business Media Dordrecht 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this the relevant protective laws and regulations and therefore free for general use names are exempt from publication does not imply, even in the absence of a specific statement, that such names are exempt from The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made Printed on acid-free paper This springer imprint is published by springer Nature The registered company is Springer Science+Business Media B.v. Dordrecht Once again to my wife sabrina and my daughters Laura and greta Rino micheloni Foreword In 1903, the Wright brothers made the first powered flight into the third dimension After the fulfillment of this ancient dream, predictions of longer, faster, and safer fights were easy to make. Fundamental, practical breakthroughs, such as this first powered flight, are momentous when achieved. But even more striking are the unforeseen achievements that these breakthroughs enable and inspire. Few would have predicted that humans would leave footprints on the surface of the moon only 66 years after the Wright brothers' first flight The semiconductor industry touches nearly all parts of our lives and quietly scales precision manufacturing to volumes unimaginable with other methods Wafers of nonvolatile memory (NVM) routinely are fabricated with trillions of individual cells. Although challenging this density of components was predictable from the early days of gordon moore's observations that the number of compo nents on a 2D integrated circuit would double every year, and later every 2 years (Moore's Law"). Harder to predict, in 1965, were the inventions of the internet, smart phones, and autonomous vehicles. These are economically possible largely because of moore’sLaw The doubling of components is slowing to every 2.5 years. But we have also arrived at an unprecedented inflection point for Moore's Law. Component density can continue to increase by building into the third dimension. Other technologies have already added an"extra"dimension. These include pressure-sensitive touch- screens, video gesture capture, autonomous vehicle navigation, 3D printing, and drones that maneuver throughout the sky Traditional 2D semiconductor processing obviously includes the third dimen sion. Material thicknesses are varied devices are formed by multiple layers of G. Moore,"Cramming more components onto integrated circuits", Electronics Magazine 19 pp.24-27,(1965);Additionalinformationathttp://www.computerhistory.org/semiconductor/ timeline/1965-Moore html PRecently, Intel has stated that since the 22 nm process node two and a half years is the pace of doublingofcomponentsperintegratedcircuithttp://www.cnet.com/news/keeping-up-with moores-law-proves-difficult-for-intel/ VI Foreword materials and shapes; and interlayer interconnects enable complex routing Furthermore, FinFET 3D transistors have been shipping in microprocessors for several years. However, the processing that is currently utilized for 3D(orverti caP)NAND flash is fundamentally different. 2D processes fabricate devices that can be fully enumerated by viewing the x-y plane of the wafer from above However 3D flash also fabricates devices that are enumerated in the z direction perpendicular to the plane of the wafer. Just as in 1965 when Gordon Moore published his projections for the future of semiconductor fabrication, we cannot foresee all of the benefits that scaling in this additional dimension will provide It would be shortsighted to dismiss 3D semiconductor processing as just an incremental step in the progression of micro/nano-electronic fabrication. This new dimension multiplies the number of elements that can be created with the same number of photolithographic steps. As experience in manufacturing is gained, this multiplier grows from dozens, to hundreds, and possibly beyond. Fabricating devices in the third dimension provides a new degree of freedom for creativity il designs, architectures, and layouts. It offers challenges to create breakthroughs il testing, integration, power density, heat dissipation, and systems-on-chip. 3D semiconductors can become a profitable platform for experimenting with interac tions between these fields to yield new economies of scale that do not yet exist 3D upon 3D systems are being imagined in which a stack of varied devices can replace a computer, and eventually a portion of a data center. What is not yet seen is the new field of view these advances will clear so that we can envision what is beyond them. Becoming efficient at building 3D flash is likely to be a critical step on the path to creating what has not yet been imagined. It is often said that what used to take a roomful of electronics now easily fits in our pockets. 3D processing may allow us to make the same statement about a roomful of today's technology It may also allow us to say that what once took a pocketful of components now fits in a blood cell To accelerate the implementation and adoption of 3D systems, clear, practical information is needed. Rino Micheloni's new book provides a wealth of hard-to-find information that can help push the industry forward. It can expand the number of people who confidently take the first step into new manufacturing possibilities. Just as the practical skills needed for creating powered fight were learned in a bicycle shop, the practical skills for creating the next breakthroughs of nano-electrical systems are being learned in 3D flash fabs. This large industry will serve as an invaluable incubator from which future jobs, employees, and inventors will grow. University professors are encouraged to build on the information in this book and make 3D complexity clear and understandable for the next generations of graduates. 3D processing and design will likely move from the "future topics section of classes to core fundamentals of the engineering curriculum. Students will C H. Lee et al., " Novel body tied FinFet cell array transistor dRaM with negative word line operation for sub 60 nm technology and beyond", VLSI Technical Digest, pp. 130-131,(2004) learn how to efficiently transport charge at the 3D nanoscale and perhaps have routine undergraduate lab exercises on the manipulation of electron spin from one layer to the next The important lessons learned by fabricating 3D flash in high volume will provide insights for forming nanoscale"vertical structures that can act as scaf- folding for future manufacturing techniques. These scaffolds might support and direct self-assembling structures or even biological growth. Such structures and know-how may revolutionize power efficiency, health care, and system miniaturization As cost and power efficiencies are realized, products with tremendous process- ing, sensing, and data densities can be expected. These products may make it possible to automate and optimize tasks from the critical to the mundane to the joyous. Affordable weather forecasts for your precise location may become avail able. Autonomous transport will free up many human hours lost while driving enabling an increase in personal productivity. Ever more capable personal assistants will provide custom coaching for your athletic performance, artistic expression, or even social interactions This high density of processing, sensing, and data will enable early-adopters to differentiate their products and services in new ways, creating profitable market opportunities. As 3D processing becomes more commonplace, its techniques may be applied to existing products to improve their utility, cost, and power con sumption. Optimal design, across all electronics, might need to be redefined. We are likely to see old industries disrupted and new ones created Thanks to Rino and his many authors, contributors, supporters, editors, and staff for creating an accessible source of difficult-to-obtain knowledge on 3d memory I believe your work will serve as a catalyst for accelerating advances in 3D wafer fabrication. This, in turn, will accelerate advances in the many fields that depend on semiconductor technology Plano. TX. usa Charles h. sobey 2016 Chief Scientist at ChannelScience Preface It is difficult to understate the impact of NAND flash memory in the last decade Although flash memory has existed for a few decades, the most recent generations of nand memory have enabled wholesale change in many aspects of our daily lives. The digital music player revolution was greatly accelerated with a conversion from miniature Hard Disk Drives(HDDs)to NAND flash memory, providing the ability for customers to carry more than just the initial ground-breaking(at the time 1000 songs in your pocket". Now were carrying movie collections, video pod casts,albums, video games, and home videos in that same pocket, due in large part to advances made in NAND flash technology. Who would have guessed that a major feature for todays smart phone buyer would be the amount of local storage (i.e, NAND flash) maintained in the phone? In addition to the huge advances enabled by nand flash in consumer devices, a similar dynamic is emerging in the systems that power the internet. The intro duction of NAND fash(and SSDs)to storage architectures has completely dis rupted the existing storage giants, causing many of them to acquire start-ups versus building their own systems that can capitalize on the performance benefits of NAND-based Ssds over traditional hdds. entire racks of hdds are being replaced by a single instance of an all-flash-array, and end customers are finding themselves paying less in total cost of ownership. The presence of NAND flash, as well as other next-generation nonvolatile memories, in future storage architectures is also driving an entirely new cycle of innovation in software and hardware design, creating a Storage Renaissance of sorts To put it simply, nand flash continues to disrupt our world, and it doesnt appear to be slowing down 3D NaNd is the next enabler of continued advancement and disruption, and this book provides an excellent foundation for anyone interested in the technology, where the technology is heading next, and its impact on the industry Derek d. dicker Vice president and performance Storage BU Manager, Microsemi Corporation Acknowledgments Writing a technical book is always a challenge as there are so many details, dia- grams, graphs, and numbers that it is very easy to have"bugs"(mistakes, errors), like in all engineering projects. This is why I am especially grateful to all the people who volunteered to review the chapters This book would have never reached a conclusion without all the contributed chapters. I know that authors spent weekends and nights to put together the best possible material. Thank You All! I also want to thank Cindy Zitter from Springer: this is the sixth book she is helping me with. I do really appreciate her continuous support Last but not least, let me thank Luca Crippa for his tireless dedication to this project: he contributed with all the amazing bird's-eye views and cross sections of Chaps. 3-6. I am sure that the reader will be impressed by these 3d views Rino micheloni Contents The business of nand Rahul n. advani 2 Reliability of 3D NANd Flash memories .29 A. Grossi. C. Zambelli and p. olivo 3 3D Stacked NAND Flash Memories 63 Rino micheloni and Luca Crippa 4 3D Charge Trap NAND Flash Memories 85 Luca Crippa and Rino micheloni 5 3D Floating Gate NANd Flash Memories 129 Rino micheloni and luca Crippa 6 Advanced Architectures for 3D NAND Flash memories with vertical channel 167 Luca Crippa and rino micheloni 7 3D VG-Type NAND Flash memories ....197 Andrea silvagni 8 RRAM Cross-Point Arrays 223 Huaqiang Wu, Yan Liao, Bin Gao, Debanjan Jana and He Qian 9 3D Multi-chip Integration and Packaging Technology for NAND Flash memories 261 Herb huang and rino micheloni 10 BCH and LDPC Error Correction Codes for NAND Flash memories 281 Alessia marelli and rino micheloni 11 Advanced Algebraic and Graph-Based ECC Schemes for Modern Nvms · 321 Frederic sala, Clayton Schoeny and Lara dolecek XV 【实例截图】
【核心代码】
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