MicroElectronic Circuit Design

【实例简介】
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。
FIETH EDITION MICROELECTRONIC HM-M- CIRCUIT DESIGN RICHARD C. JAEGER Auburn University TRAVIS N. BLALOCK University of Virginia Mc Graw Education Graw Education MICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIO Published by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill Education All rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of this publication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system, without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or other electronic storage or transmission, or broadcast for distance learnin Some ancillaries, including electronic and print components, may not be available to customers outside the United States This book is printed on acid-free pape 1234567890DOw/DOw1098765 ISBN978-0-07-352960-8 MHID0-07-352960-5 sident Products markets Kurt L Vice President, General Manager, Products Markets: Marty Lange ce President, Content Design Delivery: Kimberly Meriwether David Managing director: Thomas Timp Global Publisher Raghu srinivasan Director. Prod relopment: Ro Director, Digital Content Development: Thomas Scaife, Ph D Product develo Vincent brash Marketing manager: Nick Mc fadden Director, Content Design Delivery: Linda avenarius Program me Schilling Content Project Managers: Jane Mohr, Tammy Juran, and Sandra M. Schnee Buyer: Jennifer Pickel Design: Studio Montage, St Louis, MO Content Licensing Specialist: DeAnna Dausener Compositor: MPS Limited Printer.R. Donnell All credits appearing on page or at the end of the book are considered to be an extension of the copyright page Library of Congress Cataloging-in-Publication Data Jaeger. Richard c Microelectronic circuit design/Richard C. Jaeger, Auburn University, Travis N. Blalock, University of Virginia. --Fifth edition pages cm Includes bibliographical references and index ISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper) d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuit esign. I. Blalock, Travis N. Il. Title TK7874.J3332015 621.3815-dc23 2014040020 The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicate an endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy of the information presented at these sites www.mhhe.com TO To Joan, my loving wife and life long partner Richard C. Jaeger In memory of my father, Professor Theron vaughn Blalock, an inspiration to me and to the countless students whom he mentored both in electronic design and in life. Travis n blalock BRIEF CONTENTS Preface xx Chapter-by-Chapter Summary XXV 12 Operational Amplifier Applications 685 PART ONE 13 Small-Signal Modeling and Linear SOLID-STATE ELECTRONICS AND DEVICES Amplification 770 14 Single-Transistor Amplifiers 841 1 Introduction to Electronics 3 2 Solid-State Electronics 41 15 Differential Amplifiers and Operational Amplifier 3 Solid-state Diodes and Diode circuits 72 Design 952 4 Field-Effect Transistors 144 16 Analog Integrated Circuit Design Techniques 1031 5 Bipolar Junction Transistors 215 17 Amplifier Frequency Response 1113 18 Transistor Feedback Amplifiers and PART TWO Oscillators 1217 DIGITAL ELECTRONICS APPENDICES 6 Introduction to Digital Electronics 283 7 Complementary MOS (CMOS) Logic Design 359 A Standard Discrete Component Values 1291 8 MOS Memory Circuits 414 B Solid-State Device Models and sPIce simulation Parameters 1294 9 Bipolar Logic Circuits 455 C TWo-Port Review 1299 PART THRE Index 1303 ANALOG ELECTRONICS 10 Analog Systems and Ideal Operational Amplifiers 517 11 Nonideal Operational Amplifiers and Feedback Amplifier Stability 587 CONTENTS Preface xx CHAPTER 2 Chapter-by-Chapter Summary XXV SOLID-STATE ELECTRONICS 41 PART ONE 2.1 Solid-State Electronic materials 43 2.2 Covalent bond model 44 SOLID-STATE ELECTRONICS 2.3 Drift Currents and mobility in AND DEVICES 1 Semiconductors 47 2.3.1 Drift Currents 47 CHAPTER 1 2.3.2 Mobility 48 INTRODUCTION TO ELECTRONICS 3 2.3.3 Velocity Saturation 48 2.4 Resistivity of Intrinsic Silicon 49 1.1 A Brief History of Electronics: From 2.5 Impurities in Semiconductors 50 Vacuum Tubes to Giga-Scale Integration 5 2.5.1 Donor Impurities in silicon 51 1.2 Classification of Electronic Signals 8 2.5.2 Acceptor Impurities in Silicon 51 1.2.1 Digital signals 9 2.6 Electron and hole concentrations in 1.2.2 Analog Signals 9 Doped semiconductors 51 1.2.3 A/D and D/A Converters--Bridging 2.6.1 Type Material (ND >NA)52 the analog and Digital 2.6.2 p-Type Material (N, A>ND)53 Domains 10 2.7 Mobility and Resistivity in Doped 1.3 Notational conventions 12 Semiconductors 54 1.4 Problem-Solving Approach 13 2.8 Diffusion currents 58 1.5 Important Concepts from Circuit 2. 9 Total Current 59 Theory 15 2.10 Energy Band Model 60 1.5.1 Voltage and current Division 15 2.10.1 Electron-Hole pair generation in 1.5.2 Thevenin and norton circuit an intrinsic semiconductor 60 Representations 16 2.10.2 Energy Band Model for a Doped 1.6 Frequency Spectrum of Electronic Semiconductor 61 Signals 21 2.10.3 Compensated semiconductors 61 1.7 Amplifiers 22 2.11 Overview of Integrated circuit 1.7.1 Ideal operational amplifiers 23 Fabrication 63 1.7.2 Amplifier Frequency Response 25 Summary 66 1.8 Element Variations in Circuit Design 26 Key Terms 67 1.8.1 Mathematical modeling of Reference 68 Tolerances 26 Additional Reading 68 1.8.2 Worst-Case Analysis 27 Problems 68 8.3 Monte Carlo analysis 29 1.8.4 Temperature Coefficients 32 CHAPTER 3 1.9 Numeric Precision 34 SOLID-STATE DIODES AND DIODE CIRCUITS 72 Summary 34 Key Terms 35 3.1 The pn Junction Diode 73 References 36 3.1.1 pn Junction Electrostatics 73 Additional Reading 36 3.1.2 nternal diode currents 77 Problems 36 3.2 The i-v Characteristics of the diode 78 VIll Contents 3.3 The Diode Equation: A Mathematica 3.15 Full-Wave Bridge Rectification 123 Model for the diode 80 3.16 Rectifier Comparison and Design 3.4 Diode Characteristics under reverse, Zero Tradeoffs 124 and forward bias 83 3.17 Dynamic Switching Behavior of the Diode 128 3.4.1 Reverse bias 83 3.18 Photo diodes, solar cells, and 3. 4.2 Zero bias 83 Light-Emitting Diodes 129 3.4.3 Forward Bias 84 3.18.1 Photo diodes and 3.5 Diode Temperature Coefficient 86 Photodetectors 129 3.6 Diodes under reverse bias 86 3.18.2 Power Generation from Solar Cells 130 3.6.1 Saturation Current in real 3.18. 3 Light-Emitting Diodes(LEDs)13 Diodes 87 Summary 132 3.6.2 Reverse Breakdown 89 Key Terms 133 3.6.3 Diode model for the breakdown Reference 134 Region 90 Additional Reading 134 3.7 pn Junction Capacitance 90 Problems 134 3.7.1 Reverse bias 90 3.7.2 Forward Bias 91 CHAPTER 4 3.8 Schottky Barrier Diode 93 3.9 Diode SPICE Model and layout 93 FIELD-EFFECT TRANSISTORS 144 3.9.1 Diode Layout 94 4.1 Characteristics of the MOS Capacitor 145 3.10 Diode Circuit Analysis 95 4.1.1 Accumulation Region 146 3.10.1 Load-Line Analysis 96 4.1.2 Depletion Region 147 3.10.2 Analysis Using the Mathematical 4.1.3 Inversion Region 147 Model for the diode 97 4.2 The nmos transistor 147 3.10.3 The Ideal diode model 101 4.2.1 Qualitative i-v Behavior of the 3.10.4 Constant Voltage Drop Model 103 NMOS Transistor 148 3.10.5 Model Comparison and 4.2.2 Triode Region Characteristics of Discussion 104 the nmos transistor 149 3.11 Multiple-Diode Circuits 105 4.2.3 On Resistance 152 3.12 Analysis of Diodes Operating in the 4.2.4 Transconductance 153 Breakdown Region 108 4.2.5 Saturation of the i-v 3.12.1 Load-Line Analysis 108 Characteristics 154 3.12.2 Analysis with the Piecewise 4.2.6 Mathematical model in the Linear model 108 Saturation (Pinch-off) 3.12.3 Voltage regulation 109 Region 155 3.12.4 Analysis Including Zener 4.2.7 Transconductance in saturation 156 Resistance 110 4.2.8 Channel-Length Modulation 156 3.12.5 Line and Load Regulation 111 4.2.9 Transfer characteristics and 3.13 Half-Wave Rectifier Circuits 112 Depletion-Mode MosFETs 157 3.13.1 Half-Wave Rectifier with resistor 4.2.10 Body Effect or Substrate Load 112 Sensitivity 159 3.13.2 Rectifier Filter Capacitor 113 4.3 PMOS Transistors 160 3.13.3 Half-Wave Rectifier with rc load 114 4.4 MOSFET Circuit Symbols 162 3. 13.4 Ripple Voltage and Conduction 4.5 Capacitances in MOS Transistors 165 Interval 115 4.5.1 NMOs Transistor Capacitances in 3.13.5 Diode Current 117 the Triode region 165 3.13.6 Surge Current 119 4.5.2 Capacitances in the Saturation 3.13.7 Peak-Inverse-Voltage(PlV)Rating 119 Region 166 3.13.8 Diode Power Dissipation 119 4.5.3 Capacitances in Cutoff 166 3.13.9 Half-Wave Rectifier with Negative 4.6 MOSFET Modeling in SPICE 167 Output Voltage 120 4.7 MOS Transistor Scaling 168 3.14 Full-Wave Rectifier Circuits 122 4.7.1 Drain Current 169 3. 14.1 Full-Wave Rectifier with Negative 4.7.2 Gate Capacitance 169 Output Voltage 123 4.7.3 Circuit and power densities 169 Contents IX 4.7.4 Power-Delay Product 170 5.3 The pnp Transistor 223 4.7.5 Cutoff Frequency 170 5.4 Equivalent Circuit Representations for the 4.7.6 High Field Limitations 171 Transport Models 225 4.7.7 The unified mos transistor model 5.5 The i-v Characteristics of the bipolar Including High Field Limitations 172 Transistor 226 4.7.8 Subthreshold conduction 173 5.5.1 Output Characteristics 226 4.8 MOs Transistor Fabrication and layout 5.5.2 Transfer characteristics 227 Design Rules 174 5.6 The Operating Regions of the Bipolar 4.8.1 Minimum Feature size and Transistor 227 Alignment Tolerance 174 5.7 Transport Model Simplifications 228 4.8.2 Mos Transistor Layout 174 5.7.1 Simplified Model for the Cutoff 4.9 Biasing the NMOS Field-Effect Region 229 Transistor 178 5.7.2 Model Simplifications for the 4.9.1 Why Do We Need Bias? 178 Forward-Active Region 231 4.9.2 Four-Resistor Biasing 180 5.7.3 Diodes in Bipolar Integrated 4.9.3 Constant Gate-Source Voltage Circuits 237 Bias 184 5.7.4 Simplified Model for the 4.9.4 Graphical analysis for the Reverse-Active Region 238 Q-Point 184 5.7.5 Modeling Operation in the 4.9.5 Analysis Including Body Effect 184 Saturation Region 240 4.9.6 Analysis Using the Unified 5.8 Nonideal Behavior of the bipolar Model 187 Transistor 243 4.10 Biasing the PMos Field-Effect Transistor 188 5.8.1 Junction Breakdown Voltages 244 4.11 The junction Field-Effect Transistor 5.8.2 Minority-Carrier Transport in the UFET190 Base Region 244 4.11.1 The JFET With Bias Applied 19 5.8.3 Base Transit time 245 4.11.2 JFET Channel with Drain-Source 5.8.4 Diffusion Capacitance 247 Bias 193 5.8.5 Frequency Dependence of the 4.11.3 n-Channel jfet i-v Characteristics 193 Common-Emitter current gain 248 4.11.4 The p-Channel JFET 195 5.8.6 The Early Effect and Early 4.11.5 Circuit Symbols and JFET Model Voltage 248 Summary 195 5.8.7 Modeling the Early Effect 249 4.11.6 JFET Capacitances 196 5.8.8 Origin of the Early Effect 249 4.12 JFET Modeling in Spice 196 5.9 Transconductance 250 4.13 Biasing the JFET and Depletion-Mode 5.10 Bipolar Technology and sPiCe Model 251 MOSFET 197 5.10.1 Qualitative Description 251 Summary 200 5.10.2 SPICE Model Equations 252 Key Terms 202 5.10.3 High-Performance Bipolar References 202 Transistors 253 Problems 203 5.11 Practical bias circuits for the bjt 254 5.11.1 Four-Resistor bias network 256 CHAPTER 5 5.11.2 Design Objectives for the BIPOLAR JUNCTION TRANSISTORS 215 Four-Resistor bias network 258 5.11.3 terative Analysis of the 5.1 Physical Structure of the Bipolar Four-Resistor bias circuit 262 Transistor 216 5.12 Tolerances in bias circuits 262 5.2 The Transport Model for the npn 5. 12.1 Worst-Case Analysis 263 Transistor 217 5. 12.2 Monte Carlo Analysis 265 5.2.1 Forward Characteristics 218 Summary 268 5.2.2 Reverse Characteristics 220 Key Terms 270 5.2.3 The Complete Transport Model References 270 Equations for Arbitrary Bias Problems 271 Conditions 221 【实例截图】
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