英飞凌IGBT驱动培训资料

【实例简介】
在电力电子装置中的一个重要组成部分,输入连接到控制电路 的PWM信号输出端，输出连接到装置各IGBT的门极和发射极 ，将装置中的控制电路产生的数字PWM信号进行隔离传输和 电平转换和功率放大,实现控制电路对IGBT进行开通和关断动 作的控制，从而实现装置的功率变换功能。
Infineon technologies IGBT Gate Drive: Power Supplies a Gate driving voltage for IGBT +15V turn-on is normally +15V Driver>□1 a Gate driving voltage for IGBT OV turn-off can be oV or negative With Single Power Supply 5V to-15V) a Negative gate driving voltage +15V helps IGBt switch off faster remain in off state but it Driver needs dual power supplies OV Whether to use oV or negative gate driving voltage depends 15V With Dual Power Supplies on the requirement on cost ZH Liang - Al AP performance 05Dec2003 age for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: Interface Opto-couplers is commonly used as interfacing devices for applications where both signal transmission and potential isolation are required Opto-couplers offers reliable isolation between IGBT (high-potential)& micro-controller(low-potential) Opto-couplers has long signal delay(us)and is expensive Isolation +VDp CC Micro Driver controller ZH Liang - Al AP 05Dec2003 Page 6 for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: Half-bridge Drive Standard configuration: 2 drivers, 2 power supplies, 2 opto-couplers Advantages: standard, reliable Disadvantages: using opto-couplers, higher system cost Isolation +VDDl CC1 Driver CC1 Mi cro controller DD2 +V CC2 Driver CC2 ZH Liang - Al AP 05Dec2003 Page 7 for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: Half-bridge Drive In half-bridge IGBT drive, opto-couplers offer two functions (1)safety isolation &(2) shifting the potential of the gate signal from uc potential to high-side potential If safety isolation between IGBT& micro-controller is not needed, then"Level Shift" can replace opto-coupling and realize function(2) Opto High-side High-side coupler Driver IGBT Micro- Opto- LoW-side Low-side controller coupler Driver IGBT ZH Liang - Al AP 05Dec2003 Page 8 for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive Level shift I Features HVc(600V/1200V) 沿 PULSE R FILTER Short Signal Delay PULSE ■Cost- effective GEN ■ No Safety Isolation evel Shift Half-bridge Driver I Benefit High-side ““° IGBT O Saving Opto-couplers Level (lower system cost Shift Micro ● Wider range of controller Level Low-side ■■■■■直■口m留■ Switching Frequency Shift IGBT (higher flexibility) ZH Liang - Al AP 05Dec2003 Page 9 for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: CLTNEW O CLT-Coreless Transformer (for signal transmission u Coils(Primary Secondary Side)realized on Silicon O Short Signal Delay (allowing high or low switching frequency u Lower Cost(compared to 1200V level-shift driver 日 Safety Isolation CLT Half-bridge Driver High-side CLT Single Driver IGBT CLT Micro- controller CLT IGBT Micro- controller LoW-side IGBT ZH Liang - Al AP 05Dec2003 age for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: Boot-strap Boot-strap circuit includes only a diode and a capacitor a In half-bridge drive, the boot-strap circuit can replace the high-side power supply and make single-supply operation possible When the low-side IGBT (or FWD)is on, the diode is forward biased and the capacitor is charged by the low-side power supply via the low-side IGBT and stores the energy When the low-side IGBt(and FWD)is OFF, the diode is reverse biased and blocks the dc-bus voltage to protect the low-side circuit. Meanwhile, the capacitor supplies energy to the high-side driver The boot-strap capacitance should be high enough to keep the supply voltage stable Capacitance needed can be calculated based on the working conditions and device parameters ZH Liang - Al AP 05Dec2003 age for internal use only Infineon Technologies Asia Pacific Infineon technologies IGBT Gate Drive: Boot-strap circuit Conventional 2 心菲*|■3 high-side power supplies ■1|oW- side power supply Using boot-strap circuit 心体心心 ●3 diodes& capacitors o 1 low-side power supply Features a Diode: ultra-fast recovery a Capacitor: general-purposed I TA a Dependent on low-side IGBT Benefits Saving 3 PS(transformer cost) 2 2 ZH Liang - Al AP 05Dec2003 Reducing wiring connection Page 12 for internal use only Infineon Technologies Asia Pacific 【实例截图】
【核心代码】