Silvaco tcad_example

【实例简介】
Silvaco不同器件结构的各种特性仿真的例子和程序，非常全面
Notice The information contained in this document is subject to change without notice SIL VACO International maKes no warranty of any kind wth regard to this MATERIAL INCLUDING BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF FI NESS FOR A PARTICULAR PURPOSE SILVACO International inc shall not be liable for errors contained herein or for incidental or con sequential damages in connection with the furnishing performance or use of this material This document contains proprietary information which is protected by copyright All rights arere served. No part of this document may be photocopied reproduced or translated into another lan- guage without the prior written consent of SIL VACO International SIMULATION STANDARD, TCADDRIVEN CAD, VIRTUAL WAFER FAB, ANALOG ALLIANCE, LEGACY, ATHENA ATLAS FAST ATLAS ODIN VYPER CRUSADE RESILIENCE DISCOVERY CE LEBRITY PRODUCTION TOOLS, AUTOM ATION TOOLS, INTERACTIVE TOOLS, TONY PLOT DECK BUILD DEVEDIT, INTERPRETER ATHENA INTERPRETER ATLAS INTERPRETER CIRCUIT OPTIMIZER, MASK- VIEWS, PSTATS SSUPREM 3 SSUPREM4 ELITE, OPTOLITH FLASH, SILICIDES, SPDB, CMP MC DE POSIT MC IMPLANT PROCESS ADAPTIVE MESHING, S-PISCES, BLAZE, DEVICE 3D, INTERCONNECT3D blaZE 3. GIGA3D MIZEDMODE3D. TFT LUMINOUS GIGA MIZEDMODE ESD, LASER FASTBLAZE FASTMIXEDMODE, FASTGIGA, FASTNOISE, MoCasIm, UTMOST, UTOMST II, UTMOST IIl, UT MOST IV PROMOST SPAYN SMARTSPICE MIXSIM, TWISTER FAST SPICE SMARTLIB SDDL. EX ACT CLEVER, STELLAR, HIPEX, LISA, SCHOLAR, siren, ESCoRT, sTarlet EXPERT, savage SCOUT GUARDIAN, and envoy are trademarks of SILVaco international All other trademarks mentioned in this manual are the property of their respective owners o99,1991,1992,1993,19941995,1996,1997,1998,1999 by SIL VACO International,Inc SILVACO Internationa www.cadfamily.comEmaiL:cadserv21@hotmail.com The document is for study only, if tort to your rights, please inform us, we will delete Reader comment sheet We welcome your evaluation of this manual. Your comments and suggestions help us to improve our publications. If you have any responses to the questions bel ow please let us know. Write your observations down and send complaints bug reports, suggestions or comments to the e-mail ad- dress listed bel ow Is this manual techni cally accurate? are the concepts and wording easy to understand? Is the size of this manual convenient for you? Is the manual's arrangement convenient for you Do you consider this manual to be easily readable? Please add any additional relevant comments Please faX your comments to SIL VACO International Attention technical publications 1701 Patrick Henry Drive, building 1 Santa Clara, CA 95054 at(408)496-6080 Or Sende-mailtousat:support@si/vaco.com BrowseourWebpageathttp://www.silvaco.com SILVACO International www.cadfamily.comEmaiL:cadserv21@hotmail.com The document is for study only, if tort to your rights, please inform us, we will delete Introduction Intended audience The information in this manual is based on the fol lowing assumptions The reader is fami liar with the basic terminology of semi conductor processing and semi conductor device operation The reader understands the basic operations of the computer hardware and operation systems being used Introduction This manual is intended as an additional guide to the use of sil s process and device si mulators. It contains descriptions of all the standard examples that demonstrate the use of SSU PREM3 ATHENA ATLAS. and the vwf interactive tools manuals. u sers should consult the relevant User's Manual "for a full description of the models and syntax of each program Included on your distribution media are more than five hundred(500) Standard Examples that demonstrate the way that the simulators are used to model many different technol ogies. The exam- ples are instructional and it is strongl y recommended that new users apply these examples as a starting point for creating their own simulations. One of the first things you should learn is how to access, load, and run these examples. Accessing the Examples The examples are accessed from the menu system in DECK BUILD. To select and load an example 1. Start dEck build as descri bed in the ywf INtEractive tools manual 2 Pull down the MainControl menu using the right hand mouse button. There are op tions on this menu for MainControl, Optimizer, Examples, Help, etc. 3. Select Examples, An index will appear in a deck Build: Examples window(see be low). The examples are divided by technology or technology group The most common technolo gies are clear (e. g, MOS, BJT) while others are grouped with similar devices(e. g, IGBT and LDMOS are under PoWer, and solar cell and photodiode are under OPTOELECtRoNiCs) SILVACO International www.cadfamily.comEmaiL:cadserv21@hotmail.com The document is for study only, if tort to your rights, please inform us, we will delete TCAD Tutorial and Examples Deckbuild: Exam ples Return to index)( Section 17 LASER: Laser Diode Application Examples 18 THERMAL Themal Distribution Application Examples 19 SEU: Single Event upset Application Examples 20 DIODE Diode Application Examples ZI INTERCONNECT: Interconnect Parasitics Application Examples Z2 ATHENA SSUPREM4:2-D Process simulation 23 ATHENA ELITE: 2-D Topography Simulation 24 ATHENA_ OPTOLITH: Optical Lithography Simulation 25 ATHENA_FLASH: Compound Semiconductor Process Simulation Example 26 ATHENA CALIBRATION: Process Simulator Calibration Examples 27 ATHENA Examples Including Process, Topography, andfor Lithography 28 SSUPREM3: 1-D Process simulation 29 OPTIMIZER: General Purpose optimization 30 WWF MOS TESTS: VWF MOS Device Tests 31 WWF BIP TESTS: WF BIPOLAR Device Tests The examples Index in Deck Build 4 Choose the technology you are interested in by double-clicking the left mouse button over that item in the examples index 5. a list of examples for that technol ogy will appear. These examples typically illustrate different devices, applications or types of simulation 6. Choose a particular example by double-clicking the left mouse button over that item in the list 7. A text description of the example will appear in the window. This online text is the same as in this manual. It describes the important physical mechanisms in the sim ulation, as well as giving details of the simulator syntax used. You should read this information before proceeding 8. Press the Load Example button. The Input Command file for the example will be copied into your current working directory, together with any associated files. A copy of the command file will be loaded into DECK BUILD. Note that the load example button remains faded until step 6 is performed correctly 9. Torun the example, press the run button in the middle frame of the DECK BUILD ap plication window 10. Alternative y, most examples are supplied with results that can be copied into the current wor king directory, al ong with the input file. toview the results select (high- light) the name of the results File and select the DECK BUILD menu option, Tools Plot, details on the use of tony plot can be found in the vwf interactive tools manual SILVACO International www.cadfamily.comEmaiL:cadserv21@hotmail.com The document is for study only, if tort to your rights, please inform us, we will delete Examples Index Volume One/ Chapter 1 1.1. MOS1: MOS Application Examples 11 1.1.1. mos1ex01 in: NMOS: ld/gs and Threshold voltage Extraction 1.1.2. moslex02in NMOS: Family of ld/ds curves 1-7 1.1.3. mos1eX03. n: NMOS: Sub-Threshold Slope Extraction 1-12 1.1.4, mos1ex04 in NMOS: DIBL Extraction .1-17 1.1.5. moslex05 in NMOS: Body efect Extraction 122 1.1.6. moslex06 in NMOS: Substrate and gate Current Extraction 1-27 1.1.7. mosleX07, in: NMOS: Breakdown Voltage Extraction 1-33 1.1.8. mos1ex08 in: PMOS: ld/gs and Threshold Voltage EXtraction 140 1.1.9. mos1exo, in PMOS: Family of Id/ds Curves :1 .1-46 1.1.10. moslex10 in: PMOS: Sub-Threshold Slope Extraction 1-5 1.1.11. moslex11 in PMOS: DiBL Extraction 1-56 1.1.12. mos1ex12 in: PMOS: Body Effect Extraction 1-63 1.1.13 moslex13 in PMoS: Substrate and gate Current extraction 1.1.14. mos1ex14 in: PMOS: Breakdown Voltage Extraction 1-75 1.1.15. mos1ex15 in: NMOS: Gate Length Scaling 1-82 Volume One/Chapter 2 2.1. MOS2: Advanced MOS Application Examples ■■ ,2-1 2.1.1. mos2eX01 in: Circuit Analysis of NMOS Inverters 2-1 2.1.2. mos2eX02 in: Hot Electron Reliability .27 2.1.3 mos2ex03 in Gate Turn-on transient 2-7 2.1.4 mos2ex04 in 3D Width effect simulation ,,,,,,,,2-12 2.1.5. mos2ex05 in: Comparison of ld/ds using EB and NEB models 2-20 2.1.6. mos2eX06 in: BSIM3 SPICE Model Extraction(Salicide process 2-26 2.1.7. mos2eX07 in NMOS Snapback 2-36 2. 8. mos2ex08 in NMOS Second Breakdown simulation 240 2.1.9. mos2ex0, in Drain/Gate Overlap Capacitance 245 2.1.10. mos 2ex 10. in 2D NMOS simulation from 1D SSUPREM3 Doping 2-50 2.1.11. mos2ex11 in: Breakdown Voltage using lonization Integrals 2-54 2. 1.12, mos2ex 12 in SiGe PMos Process and Device simulation ..2-59 2.1.13. mos2ex13 in: SiGe PMos Id/ds with NeB model .,.2-65 2.1.14. mos2ex14 in: Comparison of CVT, SHIRAHAta and WaTT Mobility Models ..2-70 2.1.15. mos2ex16 in: Effect of Poly Depletion on C-V Curves 2-76 2.1.16: mos2ex 16in: Effect of Poly doping on Threshold voltage 2-81 Volume One/ Chapter 3 3.1. BJT: Bipolar Application Examples 3-1 3.1.1. bjteX01 in NPN Gummel Plot and fT Extraction 3-1 3.1.2. bjtex02 in 3D Bipolar simulation 3-6 3.1.3. bitex03 in: Analysis of nPn device with 2 Base Contacts 3-11 3.1.4. bjtex04in: NPN-Gummel Plot and lc/Vce Characterization 3-16 3.1.5. bjteX05 in NPN-BVCEO Breakdown Voltage 3-21 www.cadfamily.comEmaiL:cadserv21@hotmail.com The doswmeotiriserfefostudy only, if tort to your rights, please inform us, we will delete Technology-Dependent TCAD Tutorial and Examples 3.1.6. bjtex06in: NPN-AC Frequency Response ..3-25 3.1.7. bjteXO7 in: 3D NPN Transient Response ,.3-27 3.1.8. bjtexo8 in PNP Gummel Plot and Ic/Vce Characteristics 3-32 3.1.9. bjtex09 in: Emitter-Coupled Logic Element Simulation 3-39 3.1.10. btex 10.in: SSUPREM3/ATLAS Simulation of an NPN BJT 3-44 3.1.11. b]tex11. in: NPN-Gummel plot in 2D and 3D 3-52 Volume One/ Chapter 4 41.D|oDE; Diode Application EXamples∴… 4-1 4.1.1. diodeeXo1 in: Schottky Diode Forward characteristic 4-1 4.1.2. diodeex02 in breakdown simulation with eb and neb models .4-4 41,3. diodeex03 in Breakdown Simulation with the curve tracer 4-9 4.1 4. diodeex04 in: Silicon Carbide Diode Characteristics 4-11 4.1.5 diodeex05 in Zener diode breakdown I0 ..,4-16 4.16. diodeexo6 in 3D Diode characteristic 4-19 4.17 diodeexo7in: Gunn Diode 4-24 4.1.8. diodeex08in: 3D Diode Using Lifetime Killing .4-3 4.1.9. diodeexo9 in: Temperature Ramping-Effect on Leakage .4-36 Volume One/ Chapter 5 5.1. Sol: Sol Application Examples............. ,,,,,5-1 5.1.1. soiex01 in: Partially Depleted Sol-Vt and Subthreshold Slope 5.1.2. soiex02 in: Fully Depleted sol-Vt and Subthreshold slope 5.1.3. soieX03 in: Partially vs Fully Depleted Sol- Leakage Current Analysis .. ........... 5-9 5.1.4. soieX04 in: The Kink Effect in Partially Depleted SOI MOSFETS 5-12 5.1.5. soieX05 in Negative Transconductance-Effect of Lattice Heating 5.1.6. soieX06 in: Breakdown in SOl MOSFETS-Effect of Lattice Heating 5-22 5.1.7. soieX07in 3D Device Simulation -Effect of a body contact .5-28 5.1.8. soiexo8 in: Modeling for Deep Submicron -Process to Device 5-34 5.1.9. soiex09 in 3D Device Simulation - Effect of Lattice heating Volume One/ Chapter 6 6.1. EPROM: EPROM Application Examples 6-1 6.1.1. eprmex01 in: Flash EEPROM Programming and Erasing 6-1 6.1.2. eprmex02 in 3D Flash EPROM Programming ::::.: 1道 6-10 6.1.3. eprmeX03 in: Controlling the Capacitative Coupling 6-17 6.1.4.eprmex04 in: Hot Carrier Injection and lonization 6-23 Volume One/Chapter 7 7.1. LATCHUP: CMOS Latchup Application Examples 7.1.1. latchex01 in: Transient Simulation of CMOS Latch-Up 7-1 7.1.2. latchex02 in CMOS Latch-Up By Positive Voltage on Vdd ,,7-6 7.1.3. latchex03 in CMOS Latch-Up By Negative Voltage on Vss :::·:· 7-10 7.1.4. latchex04 in: Transient 3D CMOS Latch-UI ...7-16 www.cadfamily.comEmaiL:cadserv21@hotmail.com The document is for study only, if tort to your rights, please inform us, we will deletsLVACOInternational Xamples Index Volume One/ Chapter 8 811.esde×01in: Human Body Mode\am…………,,,…,11 8.1. ESD: ESD Application Examples 8-1 8.1.2. esdexo2 in: Charge Device Model in a Diode 重 8-5 8.1.3. esdex03 in Human Body model in a MoSFet 8-9 8.1.4. esdex04 in HBM in a MOSFET with Energy Balance Models ∴,,8-17 8. 1.5. esdex05 in Second Breakdown of a mosfet 8-23 volume One/Chapter 9 9.1. POWER: Power Device Application 9-1 9.1.1. powerexo1 in: Reverse Recovery of a Power Diode 9-1 9.1.2. powerex02 in: Vertical DMOS Tum-on Characteristics 9-4 9.1.3. powereX03 in IGBT Transient Latch-up with Lattice Heating .,9-8 9.1.4. powerex04in: IGBT Ic/Vce Characteristics 9-14 9.1.5. powerex05in Guard Ring Breakdown Analysis 9-18 9.1.6. powereX06in: GTO Turn-off Transient 9.1.7. powereX07 in LDMOS Breakdown ,,9-31 9.1.8. powereXO8 in LDMOS Breakdown using lonization Integrals 9-36 9.1.9. powerexo9 in Anisotropic Mobility characteristics of a SIC T-MOSFET ..,9-41 9.1.10. powerex10 in Anisotropic Mobility Characteristics of a SiC DMOS Device..........9-49 9.1.11. powerex11 in: Vertical DMOS Gate Charging Simulation 9-57 Volume One/Chapter 10 10.1. IsoLATION: ISOLATION Applications Examples ,,,101 10.1.1 isolationeX0. in: Local OXidation Isolation Punchthrough 101 10.1.2 isolationex02 in: Trench Isolation Punchthrough 10-8 Volume Two/ Chapter 11 11.1. MESFET: MESFET Application Examples ∴,...111 11.1.1 mesfetex01 in: lon Implanted GaAs mesfet Fabrication and Vt Test 11.1.2 mestetex02 in Epitaxial gaAs mesfet s-Parameters .11-6 11.1.3 mesfetex03 in Energy Balance and Drift Diffusion Comparison 11.1.4 mesfetex04 in: Deep Level Bulk Traps EL2)-Dc analysis ∴,,11-15 11.1.5 mesfetexO5 in: Deep Level Bulk Traps(EL2)-Transient Analysis 11-19 11.1.6 mesfetex06 in: Deep Level Bulk Traps(EL2 )-AC Analysis .11-23 Volume Two/Chapter 12 121.HBT: HBT Application Examples∴,…… ∴121 12.1.1 hbtex01 in Si/siGe hbt Gummel Plot simulation 121 12.1.2 hbtex02 in AIGaAs/GaAs hbt Gummel plot simulation .12-5 12.1.3 hbtex03, in AlGaAs /GaAs hbt avalanche breakdown ..129 12.1.4 hbtex04 in Energy Balance and Non-Isothermal Energy Balance ::: ∴..12-12 12.1.5 hbtexo5 in SiGe hbt fabrication and characterization simulation 12-17 12.1.6 hbtex06 in: In GaAs/InP HBT DC and High Frequency Characteristics 1224 www.cadfamily.comEmaiL:cadserv21@hotmail.com The doqs mAld iRefaetistdy only, if tort to your rights, please inform us, we will delete X Technology-Dependent TCAD Tutorial and Examples Volume Two/Chapter 13 131.HEMT: HEMT Application Examples∴∴∴ 131 13.1.1. hemtex01 in: User Model Development with the C-Interpreter 13-1 13.1.2, hemtex02, in Lattice Matched hemt Breakdown simulation 13.13. hemtex03n: AlGaAs/ GaAs hEmt ld-vgs and ld-Vds Characterization…….∴ ..13-5 13-10 13.1.4. hemtex04 in Energy Balance and Drift Diffusion Comparison 13-14 13.1.5. hemtex05 in Recessed Gate Pseudomorphic HEMT DC Characterization 13-21 13.1.6. hemtex06 in PHEMT High Frequency analysis 13-35 Volume Two/ Chapter 14 14.1. QUANTUM: Device Simulation with Quantum Mechanics ............I......14-1 14.1.1 quantumeX01 in CV Analysis Of Thin Gate Oxide PMOS Capacitor 14-1 14.1.2 quantumexo2 in CV Analysis Of Thin Gate Oxide NMOS Capacitor 14-4 14.1.3 quantumeX03 in: Channel Quantization in a Phemt 14-8 14.1.4 quantumex04in: Heterojunction Diode Leakage 14-12 Volume Two/ Chapter 15 151.TFT:TFTAplicatonExamples.,,,, 15-1 15.1.1 tftex01 in: Amorphous silicon TFT: Passivated Device 151 15.1.2 tftex02 in Amorphous Silicon TFT: Un-Passivated Device 15-4 15.1.3 tftex03 in Polysilicon TFT: Passivated Device 15-8 15.1.4 fteX04 in: Polysilicon TFT: Un-Passivated Device ...15-11 15.1.5 tftex05 in Forward/ Reverse Gate Voltage Characteristic 15-15 Volume Two/Chapter 16 161. PTOELECTRONICS: Optoelectronics Application Examples∴∴∴, ,,,16-1 16.1.1 optoex01 in: Photodetector-Overview and Structure Definition 16-1 16.1.2 optoex02 in Photodetector: DC Characterization 16-3 16.1.3 optoeX03 in: Photodetector Transient Response 16-6 16.1. 4 optoex04 in: Photodetector: AC Response 16-9 16.1.5 optoeX05 in: Photodetector: Spectral Response ..16-12 16.1.6 optoex06in: Luminous Efficiency of a lII- V LED Device 16-14 16.1.7 optoex07 in: User-defined photo-Generation Rate .16-20 16.1.8 optoeXD8in: Solar Cell Simulation 16-23 Volume Two/ Chapter 17 17.1. CCD: CCD Application Examples 171 17.1.1 ccdex01 in Ilumination and Charge Transfer 17.1.2 codeX 2. in Emptying The Storage Well Using Quasi Fermi Levels ............... 17-8 17.1.3 ccdex03 in: Finding the Maximum Potential and Integrated Charge ∴..17-14 Volume Two/Chapter 18 18.1. LASER: Laser Diode Application EXamples ...........................18-1 18.1.1 lasereXo1 in: InP/InGaAsP Laser: Simple Gain model 18-1 18.1.2 lasereX02 in InP/In GaAsP Laser: Emission Spectrum Analysis 18-9 18.1.3 laserex03 in GaAs/AlGaAs Strip Geometry Laser ..18-16 www.cadfamily.comEmaiL:cadserv21@hotmail.com The xdocument is for study only, if tort to your rights, please inform us, we will deletsLVACOInternational 【实例截图】
【核心代码】