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TCAD三维仿真教程

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  • 发布时间:2020-09-11
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【实例简介】
TCAD 三维设计模式,给出了三维的设计的最基础和最完善的方式
Simon li. Yue fu 3D TCAD Simulation for Semiconductor processes Devices and Optoelectronics S pringer imon ll Yue fu Crosslight software. Inc Crosslight software, Inc Burnaby, BC, Canada Burnaby, BC, Canada simonacrosslight.com fred@crosslight.com ISBN978-1-4614-0480-4 e-ISBN978-1-4614-0481-1 DOI10.1007978-1-46140481-1 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2011934485 C Springer Science+Business Media, LLC 2012 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software or by similar or dissimilar methodology now known or hereafter developed is forbidden The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights Printed on acid-free paper SpringerispartofSpringerScience+businessMedia(www.springer.com) Preface 3D Is for real life We are living in a 3D world. Everything we see is in 3D. Seeing is believing 3D Is Technology Trend The movies we watch have just turned 3D. Now, even the TVs we watch, the electronic games we play are turning 3D. The same trend is happening to semi- conductor technology modeling 3D Is for Teaching and learning Traditionally semiconductor devices are taught with their cross sections and students may never get a chance to see the real 3d picture It is time to explore a whole new world of semiconductor devices in their original 3d form A Picture Is worth a Thousand words With explosive amount of information available in the information age, a new generation of students demands more efficient way of learning than reading long paragraphs of texts. Whenever possible, this book uses 3D illustrations to explain the ideas in semiconductor processing and device modeling What Is 3D TCAD? The semiconductor transistor is the foundation of modern electronics technology and is undoubtedly one of the great innovations of the twentieth century. Technology Computer Aided Design(TCAD)refers to numerical modeling of semiconductor technology process and device characteristics using software tools. Some of the earlier iterations of these tools were developed at stanford University in the 1980s and were in ID or 2D due to limitations in computer speed and memory. This book extends these concepts to a new dimension PI reface 3D TCAD is now made possible because of advances in computer hardware 3D TCAD gives us an unprecedented experience in device design and new insights into their behavior. For the first time we are able to view the device as they actually exist rather than using 2D cross sections Why 3D TCAD? Semiconductor devices are all in 3D as we pointed out. Many devices have strong 3D effects which conventional 2D simulation cannot provide the accuracy required in TCAD projects How to Setup 3D TCAD? This might be the very first book that deals exclusively with 3D TCAD simulation The book will be focused on how to set up a 3D TCAD Simulation, from mask layout all the way to electricalyoptical device simulation. We offer plenty of 3D examples with step by step guidance, making the book a useful reference for those who wish to set up their first 3D simulation using any tCad tools with 3D capability. This book is arranged in ten Chapters. The first chapter provides an overview of semiconductor industry and TCAD usage. The second and third chapter are devoted to giving advanced user an overview of the physical models used in both process and device simulation The fourth chapter prepares the reader with basic knowledge of 3D TCAD. It will bridge the gap between layout mask and simulation. Topics like how to set up 3D TCAD, the file structure and an overview of the simulation tools are included. Use of gPu acceleration in 3D TCAD is also explained Device examples start from Chap 5 and are divided into several categories: P-N junction diodes, MOSFET and CMOS technology, power devices, interconnect CMOS image sensor and laser diodes. These examples cover most of the popular devices in use today and provide useful technology and physics insights Who is this book for? Senior undergraduate students and graduate students, working professionals and engineers, professors who wish to find a teaching reference book and others who are interested in learning about semiconductor devices or simulations 3D Is for real life We are living in a 3D world. Everything we see is in 3D. Seeing is believing Acknowledgments We are especially grateful to our colleague, Mr. Michel Lestrade, who spent countless hours reviewing and editing of this book. Preface Special thanks to Dr. George Xiao from Crosslight, who has made significant contributions to Chap 9. We would also like to express our deep appreciation to Professor Maggie Xia from the University of British Columbia, Professor John Shen from University of Central Florida, Mr Gang Xie from University of Toronto and Mr. Yuanwei Dong from the University of British Columbia for their careful reviews and suggestions. Burnaby bC, Canada Simon li Yue fi Contents I Semiconductor Industry and Tcad...….....…… 1. 1 The Semiconductor Industry ......... 1.1.1 Types of Semiconductor Companies 1. 1. 2 Semiconductor Engineering Groups in a Typical IDM.... 4 1.2 A Typical Analog/Power Technology Development Flow 1. 2.1 Planning Stage...... 6 1.2.2 Device Design Stage.………………… 7 1.2.3 Fabrication and Test Stage. 1.2.4 Reliability and qualification Stage 8 1.3 About Technology Computer Aided Design (TCAD)........ 9 1. 3. 1 Difference Between IC cad and TCAD 1.3.2 Semiconductor process simulator 1. 3. 3 Semiconductor Device Simulator 1.3.4 Why 3D TCAD? 13 1. 3.5 Stacked Planes method vs. Traditional bulk method for 3D TCAD 1.3.6 Quasi-3D VS Full-3D in Process Simulation 16 2 Advanced Theory of TCAD Process Simulation.......... 19 2.1 Diffusion model in TcaD 19 2.1.1 Vacancies 2.1.2 Interstitial 20 2.1.3 Active Impurities 2.1.4 Inactive Impurities 22 2.1.5 Neutral Impurities 2.1.6 Si-Ge Inter-diffusion 23 2.2 Stress models 24 2.2.1 Governing Equations.……………… 24 2.2.2 Intrinsic stress 25 2. 3 Oxidation 27 2.3.1 Oxide as a Newtonian Fluid 27 【实例截图】
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