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JESD79-2F.pdf

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  • 实例大小:1.92M
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  • 发布时间:2020-09-10
  • 实例类别:一般编程问题
  • 发 布 人:sakurazzz
  • 文件格式:.pdf
  • 所需积分:2
 相关标签: JESD79

实例介绍

【实例简介】
【实例截图】

【核心代码】

Contents
1 Scope ................................................................................................................................................. 1
2 Package ballout & addressing ......................................................................................................... 2
2.1 DDR2 SDRAM package ballout ...................................................................................................... 2
2.2 Quad-stacked/quad-die DDR2 SDRAM internal rank associations .............................................. 11
2.3 Input/output functional description ................................................................................................ 13
2.4 DDR2 SDRAM addressing ............................................................................................................ 14
3 Functional description ................................................................................................................... 16
3.1 Simplified state diagram ................................................................................................................ 16
3.2 Basic functionality ......................................................................................................................... 16
3.3 Power-up and initialization ............................................................................................................ 16
3.3.1 Power-up and initialization sequence ........................................................................................ 17
3.4 Programming the mode and extended mode registers ................................................................. 18
3.4.1 DDR2 SDRAM mode register (MR) ........................................................................................... 18
3.4.2 DDR2 SDRAM extended mode registers (EMR(#)) ................................................................... 19
3.4.3 Off-chip driver (OCD) impedance adjustment ............................................................................ 24
3.4.4 ODT (on-die termination) ........................................................................................................... 27
3.4.5 ODT related timings ................................................................................................................... 27
3.5 Bank activate command ................................................................................................................ 32
3.6 Read and write access modes ...................................................................................................... 32
3.6.1 Posted CAS ............................................................................................................................... 32
3.6.2 Burst mode operation ................................................................................................................ 34
3.6.3 Burst read command ................................................................................................................. 34
3.6.4 Burst write operation .................................................................................................................. 37
3.6.5 Write data mask ......................................................................................................................... 40
3.7 Precharge operation ..................................................................................................................... 41
3.7.1 Burst read operation followed by precharge .............................................................................. 42
3.7.2 Burst write followed by precharge .............................................................................................. 44
3.8 Auto precharge operation ............................................................................................................. 45
3.8.1 Burst read with auto precharge .................................................................................................. 46
3.8.2 Burst write with auto precharge ................................................................................................. 48
3.9 Refresh command ......................................................................................................................... 49
3.10 Self refresh operation .................................................................................................................... 50
3.11 Power-down .................................................................................................................................. 51
3.12 Asynchronous CKE LOW event .................................................................................................... 55
3.13 Input clock frequency change during precharge power down ....................................................... 56
3.14 SSC (Spread Spectrum Clocking) ................................................................................................ 57
3.14.1 Terms and definitions ................................................................................................................ 57
3.14.2 SSC (Spread Spectrum Clocking) Criteria ................................................................................. 57
3.14.3 Allowed SSC band .................................................................................................................... 57
3.15 No operation command ................................................................................................................. 57
3.16 Deselect command ....................................................................................................................... 57
4 Truth tables ..................................................................................................................................... 58
4.1 Command truth table .................................................................................................................... 58
4.2 Clock enable truth table. ............................................................................................................... 59
4.3 Data mask truth table. ................................................................................................................... 60
5 Absolute maximum DC ratings ...................................................................................................... 61
6 AC & DC operating conditions ...................................................................................................... 62
Annex A (informative) Differences between JESD79-2F and JESD79-2E ..................................... 109
-iDownloaded by Chen Chen (20144116@cqu.edu.cn) on Sep 8, 2020, 8:46 pm PDT
Chongqing University
JEDEC Standard No. 79-2F
Figures
1 DDR2 SDRAM x4 ballout using MO-207 ............................................................................................ 2
2 DDR2 SDRAM x8 ballout using MO-207 ............................................................................................ 3
3 DDR2 SDRAM x16 ballout using MO-207 .......................................................................................... 4
4 Stacked/dual-die DDR2 SDRAM x4 ballout using MO-242 ................................................................ 5
5 Stacked/dual-die DDR2 SDRAM x8 ballout using MO-242 ................................................................ 6
6 Stacked/dual-die DDR2 SDRAM x16 ballout using MO-242 .............................................................. 6
7 Quad-stacked/quad-die DDR2 SDRAM x4 ballout using MO-242 ..................................................... 8
8 Quad-stacked/quad-die DDR2 SDRAM x8 ballout using MO-242 ..................................................... 9
9 Quad-stacked/quad-die DDR2 SDRAM x16 ballout using MO-242 ................................................. 10
10 Quad-stacked/quad-die DDR2 SDRAM x4 rank association ........................................................... 11
11 Quad-stacked/quad-die DDR2 SDRAM x8 rank association ........................................................... 11
12 Quad-stacked/quad-die DDR2 SDRAM x16 rank association ......................................................... 12
13 DDR2 SDRAM simplified state diagram ........................................................................................... 16
14 Initialization sequence after power-up .............................................................................................. 18
15 DDR2 SDRAM mode register set (MRS) ......................................................................................... 19
16 EMR(1) programming ....................................................................................................................... 21
17 EMR(2) programming ....................................................................................................................... 23
18 EMR(3) programming ....................................................................................................................... 24
19 OCD impedance adjustment ............................................................................................................ 24
20 OCD adjust mode ............................................................................................................................. 26
21 OCD drive mode ............................................................................................................................... 26
22 Functional representation of ODT .................................................................................................... 27
23 ODT update delay timing - tMOD ..................................................................................................... 28
24 ODT update delay timing - tMOD, as measured from outside ......................................................... 28
25 ODT timing for active/standby mode ................................................................................................ 29
26 ODT timing for power-down mode ................................................................................................... 29
27 ODT timing mode switch at entering power-down mode .................................................................. 30
28 ODT timing mode switch at exiting power-down mode .................................................................... 31
29 Bank activate command cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2 ............................. 32
30 Example 1: Read followed by a write to the same bank,
where AL = 2 and CL = 3, RL = (AL   CL) = 5, WL = (RL - 1) = 4, BL = 4 .......................... 33
31 Example 2: Read followed by a write to the same bank,
where AL = 0 and CL = 3, RL = (AL   CL) = 3, WL = (RL - 1) = 2, BL = 4 .......................... 33
32 Data output (read) timing .................................................................................................................. 35
33 Burst read operation: RL = 5 (AL = 2, CL = 3, BL = 4) ..................................................................... 35
34 Burst read operation: RL = 3 (AL = 0 and CL = 3, BL = 8) ............................................................... 35
35 Burst read followed by burst write: RL = 5, WL = (RL-1) = 4, BL = 4 ............................................... 36
36 Seamless burst read operation: RL = 5, AL = 2, and CL = 3, BL = 4 ............................................... 36
37 Read burst interrupt timing example: (CL=3, AL=0, RL=3, BL=8) .................................................... 37
38 Data input (write) timing ................................................................................................................... 38
39 Burst write operation: RL = 5 (AL=2, CL=3), WL = 4, BL = 4 ........................................................... 38
40 Burst write operation: RL = 3 (AL=0, CL=3), WL = 2, BL = 4 ........................................................... 38
41 Burst write followed by burst read: RL = 5 (AL=2, CL=3), WL = 4, tWTR = 2, BL = 4 ...................... 39
42 Seamless burst write operation: RL = 5, WL = 4, BL = 4 ................................................................. 39
43 Write burst interrupt timing example: (CL=3, AL=0, RL=3, WL=2, BL=8) ........................................ 40
44 Write data mask ............................................................................................................................... 41
45 Example 1: Burst read operation followed by precharge:
RL = 4, AL = 1, CL = 3, BL = 4, tRTP <= 2 clocks ............................................................... 42
46 Example 2: Burst read operation followed by precharge:
RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks ............................................................... 43
47 Example 3: Burst read operation followed by precharge:
RL = 5, AL = 2, CL = 3, BL = 4, tRTP <= 2 clocks ............................................................... 43
-iiDownloaded by Chen Chen (20144116@cqu.edu.cn) on Sep 8, 2020, 8:46 pm PDT
Chongqing University
JEDEC Standard No. 79-2F
Figures
48 Example 4: Burst read operation followed by precharge:
RL = 6, AL = 2, CL = 4, BL = 4, tRTP <= 2 clocks ............................................................... 44
49 Example 5: Burst read operation followed by precharge:
RL = 4, AL = 0, CL = 4, BL = 8, tRTP > 2 clocks ................................................................. 44
50 Example 1: Burst write followed by precharge: WL = (RL-1) =3 ...................................................... 45
51 Example 2: Burst write followed by precharge: WL = (RL-1) = 4 ..................................................... 45
52 Example 1: Burst read operation with auto precharge:
RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks ............................................................... 46
53 Example 2: Burst read operation with auto precharge:
RL = 4, AL = 1, CL = 3, BL = 4, tRTP > 2 clocks ................................................................. 47
54 Example 3: Burst read with auto precharge
followed by an activation to the same bank (tRC Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks) ................................ 47
55 Example 4: Burst read with auto precharge
followed by an activation to the same bank (tRP Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks) ................................ 48
56 Burst write with auto-precharge (tRC Limit): WL = 2, WR = 2, BL = 4, tRP = 3 ............................... 48
57 Burst write with auto-precharge (WR   tRP): WL = 4, WR = 2, BL = 4, tRP = 3 .............................. 49
58 Refresh command ............................................................................................................................ 50
59 Self refresh operation ....................................................................................................................... 51
60 Basic power down entry and exit timing diagram ............................................................................. 52
61 Example 1 of CKE intensive environment ........................................................................................ 52
62 Example 2 of CKE intensive environment ........................................................................................ 52
63 Read to power-down entry ............................................................................................................... 53
64 Read with autoprecharge to power-down entry ................................................................................ 53
65 Write to power-down entry ............................................................................................................... 54
66 Write with autoprecharge to power-down entry ................................................................................ 54
67 Refresh command to power-down entry .......................................................................................... 55
68 Active command to power-down entry ............................................................................................. 55
69 Precharge/precharge-all command to power-down entry ................................................................ 55
70 MRS/EMRS command to power-down entry .................................................................................... 55
71 Asynchronous CKE LOW event ....................................................................................................... 56
72 Clock frequency change in precharge power-down mode ............................................................... 56
73 AC input test signal waveform .......................................................................................................... 64
74 Differential signal levels .................................................................................................................... 65
75 AC overshoot and undershoot definition for address and control pins ............................................. 66
76 AC overshoot and undershoot definition for clock, data, strobe, and mask pins .............................. 66
77 DDR2 default pulldown characteristics for full strength driver .......................................................... 69
78 DDR2 default pullup characteristics for full strength output driver ................................................... 70
79 DDR2 default pulldown characteristics for reduced strength drive ................................................... 71
80 DDR2 default pullup characteristics for reduced strength driver ...................................................... 72
81 AC timing reference load .................................................................................................................. 83
82 Slew rate test load ............................................................................................................................ 83
83 Data Input (Write) Timing ................................................................................................................. 84
84 Data output (read) timing .................................................................................................................. 84
85 Illustration of nominal slew rate for tDS (differential DQS, DQS) ..................................................... 87
86 Illustration of nominal slew rate for tDS (single-ended DQS) ........................................................... 88
87 Illustration of tangent line for tDS (differential DQS, DQS) ............................................................... 89
88 Illustration of tangent line for tDS (single-ended DQS) ................................................................... 90
89 Illustration of nominal slew rate for tDH (differential DQS, DQS) ..................................................... 91
90 Illustration of nominal slew rate for tDH (single-ended DQS) .......................................................... 92
91 Illustration tangent line for tDH (differential DQS, DQS) .................................................................. 93
-iiiDownloaded by Chen Chen (20144116@cqu.edu.cn) on Sep 8, 2020, 8:46 pm PDT
Chongqing University
JEDEC Standard No. 79-2F
Figures
92 Illustration tangent line for tDH (single-ended DQS) ....................................................................... 94
93 Illustration of nominal slew rate for tIS ............................................................................................. 97
94 Illustration of tangent line for tIS ....................................................................................................... 98
95 Illustration of nominal slew rate for tIH ............................................................................................. 99
96 Illustration tangent line for tIH ......................................................................................................... 100
97 Method for calculating transitions and endpoints ........................................................................... 102
98 Differential input waveform timing – tDS and tDH .......................................................................... 102
99 Differential input waveform timing – tIS and tIH .......................................................................

标签: JESD79

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